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P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

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Shanghai GaNova Electronic Information Co., Ltd.

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P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

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P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices

P-Level 4H-N/SI<0001>260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave devices ...

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P Level SiC Substrate

Microwave Devices silicon carbide substrate

2 Inch SiC Substrate

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